Method of fabricating semiconductor device

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United States of America Patent

PATENT NO 9875925
SERIAL NO

15065916

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Abstract

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A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon layer, forming an oxidized barrier layer by oxidizing a surface of the barrier layer, and forming a metal layer on the oxidized barrier layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU GYEONGGI-DO SUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Han-young Anyang-si, KR 4 44
Kim, Taek-jung Seoul, KR 7 258
Kong, Myung-ho Hwaseong-si, KR 4 25
Lee, Jong-myeong Seongnam-si, KR 79 682
Park, Hee-sook Hwaseong-si, KR 76 588
Park, Jeong-hee Hwaseong-si, KR 39 778
Seo, Keon-seok Suwon-si, KR 1 7

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