Wiring board, semiconductor device, and manufacturing methods thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Aug 2, 2016
filing date -
Jun 29, 2010
priority date (Note) -
In Force
status (Latency Note)
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Abstract
It is an object to reduce defective conduction in a wiring board or a semiconductor device whose integration degree is increased. It is another object to manufacture a highly reliable wiring board or semiconductor device with high yield. In a wiring board or a semiconductor device having a multilayer wiring structure, a conductive layer having a curved surface is used in connection between conductive layers used for the wirings. The top of a conductive layer in a lower layer exposed by removal of an insulating layer therearound has a curved surface, so that coverage of the conductive layer in the lower layer with a conductive layer in an upper layer stacked thereover can be favorable. A conductive layer is etched using a resist mask having a curved surface, so that a conductive layer having a curved surface is formed.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SEMICONDUCTOR ENERGY LABORATORY CO LTD | KANAGAWA KANAGAWA |
International Classification(s)

- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ieda, Yoshinori | Atsugi, JP | 26 | 516 |
# of filed Patents : 26 Total Citations : 516 | |||
Kurata, Motomu | Isehara, JP | 113 | 2202 |
# of filed Patents : 113 Total Citations : 2202 | |||
Sasagawa, Shinya | Chigasaki, JP | 254 | 4388 |
# of filed Patents : 254 Total Citations : 4388 | |||
Taguchi, Fumika | Atsugi, JP | 3 | 37 |
# of filed Patents : 3 Total Citations : 37 |
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Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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