METHOD FOR PLANARIZING MATERIAL LAYER
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United States of America Patent
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Jul 26, 2016
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Jul 26, 2016
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Abstract
A method for planarizing a silicon layer includes providing a silicon layer having at least one recess therein. Next, a photoresist layer is formed to cover the silicon layer and fill up the recess. Then, the photoresist layer is hardened. After that, part of the photoresist layer is removed by taking a top surface of the silicon layer as a stop layer. Finally the photoresist layer and the silicon layer are etched back simultaneously to remove the photoresist layer entirely.
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