Method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device
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United States of America Patent
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Jan 23, 2018
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Apr 13, 2017
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Apr 5, 2012
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Abstract
A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by an in-situ-steam-generation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the silicon substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer.
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