Semiconductor transistor
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United States of America Patent
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Jan 23, 2018
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Mar 2, 2011
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Mar 2, 2010
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Abstract
The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.
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