Method for forming a strained semiconductor layer including replacing an etchable material formed under the strained semiconductor layer with a dielectric layer
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United States of America Patent
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Jan 23, 2018
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Sep 7, 2016
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Nov 30, 2015
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Abstract
A semiconductor device comprising a substrate having a region protruding from the substrate surface; a relaxed semiconductor disposed on the region; an additional semiconductor disposed on the relaxed semiconductor; and low density dielectric disposed next to and at least partially underneath the relaxed semiconductor and adjacent to the protruding region of the substrate.
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