Graphene layer formation at low substrate temperature on a metal and carbon based substrate

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United States of America Patent

PATENT NO 9875894
SERIAL NO

14563201

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Abstract

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A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

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Patent Owner(s)

Patent OwnerAddress
UCHICAGO ARGONNE LLC5801 SOUTH ELLIS AVENUE CHICAGO IL 60637

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Berman, Diana Darien, US 21 54
Sumant, Anirudha V Plainfield, US 41 146

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