Deposition of metal dielectric film for hardmasks

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United States of America Patent

PATENT NO 9875890
SERIAL NO

14666953

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Abstract

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A system and method for depositing a metal dielectric film includes arranging a substrate in a plasma enhanced chemical vapor deposition (PECVD) processing chamber; supplying a carrier gas to the PECVD processing chamber; supplying a dielectric precursor gas to the PECVD processing chamber; supplying a metal precursor gas to the PECVD processing chamber; creating plasma in the PECVD processing chamber; and depositing a metal dielectric film on the substrate at a process temperature that is less than 500° C.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Reddy, Sirish Hillsboro, US 15 1004
Shaikh, Fayaz Portland, US 15 661

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