High temperature silicon oxide atomic layer deposition technology

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9875888
SERIAL NO

14872775

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balseanu, Mihaela Sunnyvale, US 77 8585
Li, Ning San Jose, US 758 4862
Nguyen, Victor Novato, US 37 3250
Saly, Mark Santa Clara, US 123 1499
Trinh, Cong Santa Clara, US 31 95
Xia, Li-Qun Cupertino, US 258 19800
Yan, Wenbo Sunnyvale, US 12 69

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 23, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 23, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00