Method and device for reading a memory

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United States of America Patent

PATENT NO 9875811
SERIAL NO

14994472

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Abstract

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A method for reading data from memory cells of a target word line in a semiconductor memory includes determining a disturbance status of the target word line. The disturbance status reflects a disturbance of a neighboring word line on the memory cells of the target word line. The method further includes determining a read voltage for the target word line according to the disturbance status of the target word line and applying the read voltage to the memory cells of the target word line.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hung, Chun Hsiung Hsinchu, TW 53 362
Juan, Shih Chou Taoyuan, TW 4 9
Kuo, Nai-Ping Hsinchu, TW 49 455
Liu, Yi Chun Zhubei, TW 17 156

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