Self-identifying memory errors
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Jul 24, 2013
filing date -
Jul 24, 2013
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Abstract
A memory region can durably self-identify as being faulty when read. Information that would have been assigned to the faulty memory region can be assigned to another of that sized region in memory using a replacement encoding technique. For phase change memory, at least two fault states can be provided for durably self-identifying a faulty memory region; one state at a highest resistance range and the other state at a lowest resistance range. Replacement cells can be used to shift or assign data when a self-identifying memory fault is present. A memory controller and memory module, alone or in combination may manage replacement cell use and facilitate driving a newly discovered faulty cell to a fault state if the faulty cell is not already at the fault state.
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