Memory architecture and cell design employing two access transistors

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United States of America Patent

PATENT NO 9875795
SERIAL NO

14277282

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Abstract

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Some embodiments include an improved memory array architecture and memory cell design. In one of such embodiments, a memory cell may comprise a memory element to store a logic state and two access transistors coupled to the memory element to access the logic state of the memory element. Other embodiments are described.

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Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jun Boise, US 1497 18125

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