Sensing phase-change memory/test cells for determining whether a cell resistance has changed due to thermal exposure
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Jan 7, 2013
filing date -
Dec 30, 2009
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Abstract
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
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