Method for writing to a MRAM device configured for self-referenced read operation with improved reproducibly
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United States of America Patent
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Jan 23, 2018
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Feb 3, 2015
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Feb 6, 2014
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Abstract
A method for writing a MRAM device, including magnetic tunnel junction with a storage layer, a sense layer, and a spacer layer between the storage and sense layers. At least one of the storage and sense layers has a magnetic anisotropy axis. The method includes an initialization step including: applying an initial heating current pulse for heating the magnetic tunnel junction to a temperature above a threshold temperature at which a storage magnetization is freely orientable, providing an initial resultant magnetic field for adjusting the storage magnetization in an initial direction oriented along the magnetic anisotropy axis. The method allows performing the writing step with improved reproducibly.
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