Memory device for performing error correction code operation and redundancy repair operation

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United States of America Patent

PATENT NO 9875155
SERIAL NO

15371876

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Abstract

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Provided are a memory device and a memory module, which perform both an ECC operation and a redundancy repair operation. The memory device repairs a single-bit error due to a ‘fail’ cell by using an error correction code (ECC) operation, and also repairs the ‘fail’ cell by using a redundancy repair operation when the ‘fail’ cell is not repairable by the ECC operation. The redundancy repair operation includes a data line repair and a block repair. The ECC operation may change a codeword corresponding to data per one unit of memory cells including the ‘fail’ cell, and may also change the size of parity bits regarding the changed codeword.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

International Classification(s)

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  • 2016 Application Filing Year
  • G06F Class
  • 60255 Applications Filed
  • 46180 Patents Issued To-Date
  • 76.65 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Hoi-ju Yongin-si, KR 39 815
Park, Chul-woo Yongin-si, KR 118 2422
Park, Kwang-il Yongin-si, KR 104 1179
Sohn, Young-soo Seoul, KR 80 1049
Son, Jong-pil Seongnam-si, KR 48 736
Youn, Jae-youn Seoul, KR 32 534

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Patent Citation Ranking

  • 2 Citation Count
  • G06F Class
  • 20.77 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges785123150394313806693311801076047295401 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +02000400060008000100001200014000160001800020000220002400026000

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