Data storage device compensating for initial threshold voltage distribution shift, method of operating the same, and data processing system including the same

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United States of America Patent

PATENT NO 9875044
APP PUB NO 20160179415A1
SERIAL NO

14800783

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Abstract

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A method is provided for operating a data storage device capable of compensating for an initial threshold voltage shift of multiple memory cells. The method includes generating a first compression value for a first write address corresponding to a first write request input during a first time interval among different time intervals, and storing the first compression value in a first table among multiple tables.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kong, Jun Jin Yongin-si, KR 177 2534
Lee, Dong Hwan Namyangju-si, KR 182 965
Seol, Chang Kyu Osan-si, KR 11 27
Son, Hong Rak Anyang-si, KR 117 1385

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  • 2 Citation Count
  • G06F Class
  • 20.77 % this patent is cited more than
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