Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid
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United States of America Patent
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Jan 23, 2018
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app pub date -
Feb 23, 2015
filing date -
Mar 11, 2014
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Abstract
A method for producing a SiC single crystal substrate that can remove Cr impurity from the surface of a SiC single crystal that contains Cr as an impurity, is provided. This is achieved by a method for producing a SiC single crystal substrate, wherein the method includes a step of immersing a SiC single crystal substrate containing Cr as an impurity in hydrochloric acid at 50° C. to 80° C.
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