Epitaxial wafer and method for fabricating the same
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United States of America Patent
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Jan 23, 2018
Grant Date -
Sep 17, 2015
app pub date -
Oct 29, 2013
filing date -
Oct 31, 2012
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Abstract
Provided are an epitaxial wafer and a method of fabricating the same. The method includes a pre-growth step of injecting a reaction source for epitaxial growth on a semiconductor wafer prepared in a chamber and growing an epitaxial layer by a predetermined first thickness at a predetermined first growth rate and at a predetermined first growth temperature, a heat treatment step of performing heat treatment on the epitaxial layer grown by the pre-growth step during a predetermined time, and a subsequent growth step of injecting the reaction source on the heat-treated semiconductor wafer and growing the epitaxial layer to a target thickness at a predetermined second growth rate and at a predetermined second growth temperature. The first growth rate is smaller than the second growth rate.
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