Metal capping process and processing platform thereof

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United States of America Patent

PATENT NO 9873944
SERIAL NO

15340108

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Abstract

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Before depositing a metal capping layer on a metal interconnect in a damascene structure, a remote plasma is used to reduce native oxide formed on the metal interconnect. Accordingly, a remote plasma reducing chamber is integrated in a processing platform for depositing a metal capping layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chi, Chih-Chien Hsinchu, TW 72 675
Hsieh, Ching-Hua Hsinchu, TW 265 2259
Huang, Huang-Yi Hsinchu, TW 48 240
Tung, Szu-Ping Taipei, TW 42 254

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