Semiconductor device including positive, negative and intermediate potential conductor plates

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United States of America Patent

PATENT NO 9871465
SERIAL NO

14730760

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Abstract

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A semiconductor device can include an insulating substrate on which at least four semiconductor elements forming a three-level power conversion circuit are mounted, a base plate on which the insulating substrate is provided, a positive conductor plate with a positive DC potential which is connected to one semiconductor element among the semiconductor elements; a negative conductor plate with a negative DC potential which is connected to another semiconductor element among the semiconductor elements and an intermediate potential conductor plate with an intermediate potential which is connected to the remaining two semiconductor elements among the semiconductor elements. The positive conductor plate, the negative conductor plate, and the intermediate potential conductor plate are provided on the base plate. The positive conductor plate and the negative conductor plate are arranged close to the intermediate potential conductor plate so as to face the intermediate potential conductor plate.

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Patent Owner(s)

Patent OwnerAddress
FUJI ELECTRIC CO LTDKAWASAKI COUNTY OF KANAGAWA CITY JAPAN KAWASAKI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shuangching Matsumoto, JP 13 260
Ichikawa, Hiroaki Azumino, JP 95 2393

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