Semiconductor laser device
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United States of America Patent
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Jan 16, 2018
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app pub date -
May 20, 2016
filing date -
Oct 22, 2015
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Abstract
An active layer is provided on a side closer to the second conductivity type cladding layer than a center of the light guide layer in the light guide layer. A first conductivity type low-refractive-index layer is formed between the first conductivity type cladding layer and the light guide layer and has a refractive index which is lower than a refractive index of the first conductivity type cladding layer. A layer thickness d of the light guide layer is a value at which a high-order mode equal to or higher than a first-order mode is permissible in a crystal growing direction by satisfying
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