Laser on silicon made with 2D material gain medium

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United States of America Patent

PATENT NO 9871341
APP PUB NO 20170338621A1
SERIAL NO

15156614

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Abstract

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A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers. The alternating layers include a dielectric layer having a sub-wavelength thickness and a monolayer of a two dimensional material.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Ning White Plains, US 758 4862
Sadana, Devendra K Pleasantville, US 897 10959
Yang, Jinghui Los Angeles, US 13 60

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