Methods of forming memory devices having electrodes comprising nanowires
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 16, 2018
Issued Date -
N/A
app pub date -
Dec 19, 2016
filing date -
Apr 5, 2007
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully