Ion beam apparatus generating ion beams of bilateral symmetry
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United States of America Patent
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Jan 16, 2018
Issued Date -
N/A
app pub date -
Mar 3, 2017
filing date -
Nov 25, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.
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