Electronic device and method for fabricating the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Mar 17, 2016
filing date -
Apr 14, 2015
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Abstract
This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer; a magnetic correction layer located under the MTJ structure and operates to reduce an influence of a stray magnetic field generated by the pinned layer; and an under layer located under the magnetic correction layer and including a metal oxide layer.
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