Top emitting semiconductor light emitting device
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United States of America Patent
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Jan 16, 2018
Issued Date -
N/A
app pub date -
Mar 31, 2014
filing date -
Apr 11, 2013
priority date (Note) -
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Abstract
Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
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