Light emitting device
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Jan 20, 2015
filing date -
Jan 20, 2014
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Abstract
The light emitting device 1 includes a substrate 2, and an n-type conductive type semiconductor layer 3, a light emitting layer 4 and a p-type conductive type semiconductor layer 5 laminated in series on a surface 2A of the substrate 2. The light emitting layer 4, the p-type conductive type semiconductor layer 5, and a portion of the n-type conductive type semiconductor layer 3 excluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion 6. A p-side transparent electrode layer 14 is formed on a surface of the p-type conductive type semiconductor layer 5. The p-side transparent electrode 14 covers a substantially whole area of a predetermined current injection region 13 on a surface of the p-type conductive type semiconductor layer 5. A p-side electrode 15 is formed on a surface of the p-side transparent electrode layer 14. A plurality of concave portions 16, which penetrate the p-side transparent electrode layer 14 and enter the semiconductor laminate structure portion 6, are formed on a surface of the p-side transparent electrode layer 14.
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