Thin film transistor substrate

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United States of America Patent

PATENT NO 9871144
SERIAL NO

15357273

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Abstract

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A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the gate electrode and includes an oxide semiconductor material; and a source electrode and a drain electrode disposed on the semiconductor layer, where the drain electrode is spaced apart from the source electrode. The source electrode and the drain electrode each include a barrier layer and a main wiring layer, the a main wiring layer is disposed on the barrier layer, and the barrier layer includes a first metal layer disposed on the semiconductor layer, and a second metal layer disposed on the first metal layer.

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Patent Owner(s)

  • SAMSUNG DISPLAY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Shin-Il Yongin, KR 48 312
Kim, Bong-Kyun Yongin, KR 67 528
Yoon, Seung-Ho Yongin, KR 4 6

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