Sacrificial epitaxial gate stressors

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United States of America Patent

PATENT NO 9871139
SERIAL NO

15342003

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Abstract

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A method for fabricating a fin field effect transistor (finFET) device with a strained channel. During fabrication, after the fin is formed, a sacrificial epitaxial gate stressor is deposited on the fin, causing strain in the fin. SD structures are then formed to anchor the ends of the fin, and the sacrificial epitaxial gate stressor is removed.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Joon Goo Austin, US 50 421
Kittl, Jorge A Round Rock, US 53 604
Palle, Dharmendar Reddy Austin, US 12 353
Rodder, Mark S Dallas, US 160 3160

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