Semiconductor device and method of fabricating semiconductor device
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jun 21, 2017
filing date -
Nov 12, 2015
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Abstract
The present invention provides a semiconductor device, including a substrate, two gate structures disposed on a channel region of the substrate, an epitaxial layer disposed in the substrate between two gate structures, a first dislocation disposed in the epitaxial layer, wherein the profile of the first dislocation has at least two non-parallel slanting lines, and a second dislocation disposed adjacent to a top surface of the epitaxial layer, and the profile of the second dislocation has at least two non-parallel slanting lines.
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