Method for forming semiconductor device structure
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Oct 24, 2016
filing date -
Dec 27, 2013
priority date (Note) -
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Abstract
The semiconductor device structures are provided. The semiconductor device structure includes a gate stack structure formed on a substrate and an isolation structure formed in the substrate. The semiconductor device structure further includes a source/drain stressor structure formed between the gate stack structure and the isolation structure and a metal silicide layer formed on the source/drain stressor structure. A portion of the metal silicide layer is below a top surface of the isolation structure.
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