Method for forming semiconductor device structure
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United States of America Patent
Stats
-
Jan 16, 2018
Issued Date -
N/A
app pub date -
Oct 24, 2016
filing date -
Dec 27, 2013
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The semiconductor device structures are provided. The semiconductor device structure includes a gate stack structure formed on a substrate and an isolation structure formed in the substrate. The semiconductor device structure further includes a source/drain stressor structure formed between the gate stack structure and the isolation structure and a metal silicide layer formed on the source/drain stressor structure. A portion of the metal silicide layer is below a top surface of the isolation structure.
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International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 16, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 16, 2029 |
