Power MOSFETs and methods for manufacturing the same
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United States of America Patent
Stats
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Jan 16, 2018
Issued Date -
N/A
app pub date -
Dec 21, 2015
filing date -
Dec 21, 2015
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device and the method of manufacturing the same are provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.
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Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 16, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 16, 2029 |
