Power MOSFETs and methods for manufacturing the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Dec 21, 2015
filing date -
Dec 21, 2015
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Abstract
A semiconductor device and the method of manufacturing the same are provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.
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