Semiconductor device with insulating section of varying thickness

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United States of America Patent

PATENT NO 9871131
SERIAL NO

15251805

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Abstract

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A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a first electrode surrounded by the first semiconductor region and including a first electrode portion and a second electrode portion provided on the first electrode portion, and a first insulating section including first and second insulating portions. The second insulating portion is arranged side by side with the second electrode portion in a second direction perpendicular to a first direction from the first semiconductor region to the second semiconductor region. The first insulating portion is arranged side by side with the first electrode portion in the second direction. A length and a thickness of the first insulating portion in the first direction are greater than a length and a thickness of the second insulating portion in the first direction, respectively.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kobayashi, Kenya Ishikawa, JP 68 467

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