Semiconductor device and method for manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 16, 2018
Issued Date -
N/A
app pub date -
May 10, 2016
filing date -
Jun 10, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes trench gate electrodes, an emitter coupling section that couples them with each other, an interlayer insulating film arranged in a hybrid sub-cell region and an inactive cell region, and a contact trench penetrating it. Also, the contact trench is divided in a crossing region of extending directions of the hybrid sub-cell region and the emitter coupling section. Further, an n+-type emitter region is disposed so as to be apart from an end of the divided contact trench. With such configuration of not forming the contact trench in the crossing region, the working failure of the contact trench can be reduced. Also, because the n+-type emitter region is disposed so as to be apart from the end of the contact trench, the breakdown resistance of the semiconductor device can be improved.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 16, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 16, 2029 |
