Semiconductor device having a gap defined therein

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United States of America Patent

PATENT NO 9871121
SERIAL NO

14341568

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Abstract

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In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.

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Patent Owner(s)

  • QUALCOMM INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Badaroglu, Mustafa Leuven, BE 52 877
Machkaoutsan, Vladimir Leuven, BE 42 4863
Rim, Kern San Diego, US 193 2823
Song, Stanley Seungchul San Diego, US 134 1131
Xu, Jeffrey Junhao San Diego, US 93 1816
Yang, Da San Diego, US 41 540
Yeap, Choh Fei San Diego, US 123 1217
Zhu, John Jianhong San Diego, US 64 484

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