Semiconductor structure with an L-shaped bottom plate
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Jun 14, 2016
filing date -
Sep 25, 2014
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Abstract
A semiconductor structure having an electrical contact that is connected to source/drain structures of two different transistors. The semiconductor structure has a vertical channel and a source/drain semiconductor structure connected to the vertical channel such that the source/drain semiconductor structure has a vertical side that is substantially planar with a vertical side of the first vertical channel. The source/drain semiconductor structure extends horizontally from its vertical side farther than the first vertical channel extends from its vertical side such that a width of the source/drain is greater than a width of the first vertical channel. The first source/drain semiconductor structure is located on a layer of substrate and the vertical channel is perpendicular relative to the layer of substrate.
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