Metal gate scheme for device and methods of forming

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United States of America Patent

PATENT NO 9871114
SERIAL NO

14871580

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Abstract

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Gate structures and methods of forming the gate structures are described. In some embodiments, a method includes forming source/drain regions in a substrate, and forming a gate structure between the source/drain regions. The gate structure includes a gate dielectric layer over the substrate, a work function tuning layer over the gate dielectric layer, a metal-containing compound over the work function tuning layer, and a metal over the metal-containing compound, wherein the metal-containing compound comprises the metal as an element of the compound.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Chia-Ching New Taipei, TW 68 220
Lee, Da-Yuan Jhubei, TW 144 1127
Tsau, Hsueh Wen Zhunan Township, TW 38 364
Wu, Chung-Chiang Hsin-Chu, TW 73 237

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