Semiconductor process
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United States of America Patent
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Jan 16, 2018
Grant Date -
Sep 14, 2017
app pub date -
Mar 8, 2016
filing date -
Mar 8, 2016
priority date (Note) -
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Abstract
A semiconductor process including the following steps is provided. An epitaxial layer is formed on a substrate. An oxide layer is formed on the epitaxial layer, wherein the oxide layer includes a chemical oxide layer, a high-temperature oxide (HTO) layer or a surface modification oxide layer. An ion implant process is performed to the epitaxial layer to form a doped region in the epitaxial layer. The oxide layer is removed by using a diluted hydrofluoric acid (DHF) solution after performing the ion implant process, wherein a volume ratio of water to a hydrofluoric acid (HF) in the DHF solution is 200:1 to 1000:1.
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