Semiconductor device
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United States of America Patent
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Jan 16, 2018
Issued Date -
N/A
app pub date -
Mar 19, 2014
filing date -
Oct 10, 2013
priority date (Note) -
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Abstract
A semiconductor device according to the present invention includes, in a termination region, a p− type breakdown voltage holding region that is an impurity region formed in a predetermined depth direction from a substrate surface of an n− type substrate, a first insulating film formed on the n− type substrate so as to cover at least the p− type breakdown voltage holding region, a first field plate formed on the first insulating film, a second insulating film formed so as to cover the first field plate and the first insulating film, and a second field plate formed on the second insulating film. The first insulating film is thicker in a corner portion than in an X-direction straight portion and a Y-direction straight portion.
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