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Abstract

A nitride semiconductor device according to the present invention includes a nitride semiconductor layer having a gate, a source and a drain and a field plate on the nitride semiconductor layer electrically connected to the gate or the source, where when it is assumed that a drain voltage value where the value of C_OSS is reduced to one half of a value when a drain voltage is 0 V is V₁, the dielectric breakdown voltage of the device is V₂, a gate length is L_g, a field plate length is L_fp, a shallow acceptor concentration is N_A, a deep acceptor concentration is N_DA, a vacuum permittivity is ∈₀ and the relative permittivity of the nitride semiconductor layer is ∈, formulas (1) and (2) below are satisfied.

description='In-line Formulae' end='lead'V₁(N_A+N_DA)·L_g²/2∈₀∈  (1)description='In-line Formulae' end='tail'

description='In-line Formulae' end='lead'V₂(N_A+N_DA)·(L_g+L_fp)²/2∈₀∈  (2)description='In-line Formulae' end='tail'

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