Method of forming an isolation structure in a well of a substrate

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United States of America Patent

PATENT NO 9871105
SERIAL NO

15083844

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Abstract

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A method includes forming an isolation structure in a well of a substrate. A portion of the isolation structure protrudes from a top surface of the well. The isolation structure is partially removed, thereby forming a modified isolation structure. An upper surface of the modified isolation structure is lower than the upper surface of the substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Chien-Chih New Taipei, TW 90 310
Thei, Kong-Beng Pao-Shan Village, TW 240 3239

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