Nanowire semiconductor device structure and method of manufacturing

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United States of America Patent

PATENT NO 9871104
SERIAL NO

14755083

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Abstract

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A nanowire comprises a source region, a drain region and a channel region. The source region is modified to reduce the lifetime of minority carriers within the source region. In an embodiment the modification may be performed by implanting either amorphizing dopants or lifetime reducing dopants. Alternatively, the source may be epitaxially grown with a different materials or process conditions to reduce the lifetime of minority carriers within the source region.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doornbos, Gerben Leuven, BE 198 1210
van, Dal Mark Linden, BE 92 1716

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