Method of forming a single-crystal nanowire finFET
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United States of America Patent
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Jan 16, 2018
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app pub date -
Apr 13, 2015
filing date -
Mar 13, 2015
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Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a single crystal substrate, a source/drain structure and a nanowire structure. The source/drain structure is disposed on and contacts with the substrate. The nanowire structure is connected to the source/drain structure.
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