Semiconductor device and manufacturing method thereof
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United States of America Patent
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Jan 16, 2018
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Sep 16, 2014
filing date -
Sep 16, 2014
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Abstract
A semiconductor structure, and methods for forming the semiconductor device are provided. In various embodiments, the semiconductor device includes a substrate, source/drain regions over the substrate, a plurality of nanowires over the substrate and sandwiched by the source/drain regions, a gate dielectric layer surrounding the plurality of nanowires, and a gate layer surrounding the gate dielectric layer.
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