Trench structure of semiconductor device having uneven nitrogen distribution liner

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United States of America Patent

PATENT NO 9871100
SERIAL NO

14812864

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Abstract

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A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jangjian, Shiu-Ko Tainan, TW 172 1310
Lin, Chun-Che Tainan, TW 30 124
Lin, Jia-Ming Tainan, TW 21 43
Lin, Wei-Ken Tainan, TW 28 86
Liu, Chuan-Pu Tainan, TW 16 91
Wang, Ying-Lang Taichung, TW 181 1289

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