Semiconductor device with suppressed decrease in breakdown voltage of an insulation film and manufacturing method of the same
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Jul 22, 2015
filing date -
Dec 11, 2014
priority date (Note) -
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Abstract
A semiconductor device may include a semiconductor substrate in which a semiconductor element is provided, and an insulation film provided on the semiconductor substrate, in which the semiconductor substrate may include a first portion and a second portion which has a thickness thinner than a thickness of the first portion, an upper surface of the second portion may be positioned lower than an upper surface of the first portion, a recess extending in a thickness direction of the semiconductor substrate may be provided on the upper surface of the second portion located at a position where the first portion and the second portion adjoin to each other, and the insulation film may extend over from the first portion to the second portion, and fill the recess.
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