Method of forming an infrared filter associated with an image sensor
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
May 24, 2016
filing date -
May 28, 2015
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Abstract
An image sensor having a portion including interconnection levels formed on a semiconductor substrate covered with a first layer of a dielectric material, including conductive tracks separated from one another by insulating layers interconnected by vias crossing the insulating layers, and an infrared bandpass filter comprising filter levels adjacent to the interconnection levels formed by an alternation of second layers of the dielectric material and of silicon layers, the refraction index of the dielectric material being smaller than 2.5 at the maximum transmission wavelength of the filter, one of the second dielectric layers of each filter level being identical to the insulating layer of the adjacent interconnection level.
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