Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors
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United States of America Patent
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Jan 16, 2018
Grant Date -
Aug 10, 2017
app pub date -
Feb 5, 2016
filing date -
Feb 5, 2016
priority date (Note) -
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Abstract
A backside illuminated (BSI) image sensor for biased backside deep trench isolation (BDTI) and/or biased backside shielding is provided. A photodetector is arranged in a semiconductor substrate, laterally adjacent to a peripheral opening in the semiconductor substrate. An interconnect structure is arranged under the semiconductor substrate. A pad structure is arranged in the peripheral opening, and protrudes through a lower surface of the peripheral opening to the interconnect structure. A conductive layer is electrically coupled to the pad structure, and extends laterally towards the photodetector from over the pad structure. A method for manufacturing the BSI image sensor is also provided.
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