Infrared image sensor component

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United States of America Patent

PATENT NO 9871067
SERIAL NO

15051600

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Abstract

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An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chu, Li-Hsin New Taipei, TW 30 38
Liu, Chia-Wei Hsinchu County, TW 105 303
Tseng, Chung-Chuan Hsinchu, TW 54 348
Wu, Chien-Ying New Taipei, TW 26 18

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