Metal oxide film and method for forming metal oxide film

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United States of America Patent

PATENT NO 9871058
APP PUB NO 20150294994A1
SERIAL NO

14688232

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Abstract

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A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirohashi, Takuya Kanagawa, JP 86 2912
Ishihara, Noritaka Kanagawa, JP 54 721
Oota, Masashi Kanagawa, JP 65 909
Takahashi, Masahiro Kanagawa, JP 489 7038
Tsubuku, Masashi Kanagawa, JP 324 6207

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